MOMBE-grown carbon-doped base self-aligned AlGaAs/GaAs heterojunction bipolar transistors for microwave applications

W. J. Ho, N. L. Wang, R. L. Pierson, Mau-Chung Chang, R. B. Nubling, J. A. Higgins, S. Hersee, J. Ballingal, J. Komiak

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


The authors report the first demonstration of completely MOMBE (metal-organic molecular beam epitaxy) grown carbon-doped base self-aligned AlGaAs/GaAs HBTs (heterojunction bipolar transistors) operating at microwave frequencies. Excellent DC and RF characteristics have been achieved. For a 1400-AA-thick base doped at a level of 1 1019 cm-3, cutoff frequency fT of 45 GHz and fmax of 90 GHz were measured from common emitter HBTs. Common base HBTs with total emitter area of 360 mu m2 delivered 560 mW output power with 43% of power-added efficiency and 8.9 dB gain at 10 GHz. A high-power MMIC (monolithic microwave integrated circuit) amplifier operating in 8-11 GHz bandwidth has achieved 2 W output power. The device modeling based on measured S-parameters indicates that the performance can be further improved with optimal layer structure and doping profiles.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1 Jan 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceInternational Electron Devices Meeting, IEDM 1991
CountryUnited States


  • Cutoff frequency
  • Gallium arsenide
  • Heterojunction bipolar transistors
  • Integrated circuit measurements
  • Microwave frequencies
  • MMICs
  • Molecular beam epitaxial growth
  • Power amplifiers
  • Power generation
  • Radio frequency

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