MOMBE GaAs and AlGaAs for microelectronic devices

S. D. Hersee*, L. Yang, M. Kao, P. Martin, J. Mazurowski, Albert Chin, J. Ballingall

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

This paper reviews the state of the art of GaAs and AlGaAs materials and microelectronic devices grown by MOMBE (metalorganic molecular beam epitaxy) and related techniques. FET, HEMT and HBT devices have been grown using MOMBE and in the case of FETs and HBTs excellent device and MMIC power performance has been obtained. For example, MOMBE HBTs show current gains in excess of 100 and MMIC power HBT circuits are delivering 2 W of power at 8.5 GHz. We will examine device behavior and relate this to properties of the GaAs and AlGaAs materials.

Original languageEnglish
Pages (from-to)218-227
Number of pages10
JournalJournal of Crystal Growth
Volume120
Issue number1-4
DOIs
StatePublished - 2 May 1992

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    Hersee, S. D., Yang, L., Kao, M., Martin, P., Mazurowski, J., Chin, A., & Ballingall, J. (1992). MOMBE GaAs and AlGaAs for microelectronic devices. Journal of Crystal Growth, 120(1-4), 218-227. https://doi.org/10.1016/0022-0248(92)90394-X