Molybdenum metal gate MOS technology for post-SiO 2 gate dielectrics

Q. Lu*, R. Lin, P. Ranade, Y. C. Yeo, X. Meng, H. Takeuchi, T. J. King, Chen-Ming Hu, H. Luan, S. Lee, W. Bai, C. H. Lee, D. L. Kwong, X. Guo, X. Wang, T. P. Ma

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Abstract

Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si 3 N 4 , ZrO 2 and ZrSiO 4 was verified by good carrier mobility agreement with the universal mobility model.

Original languageEnglish
Pages (from-to)641-644
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2000
Event2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
Duration: 10 Dec 200013 Dec 2000

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