Mo metal gate p-MOSFETs with several advanced gate dielectrics were fabricated. A suitable p-MOSFET work function was achieved and good device characteristics were obtained in all cases. Thermodynamic stability of Mo on Si 3 N 4 , ZrO 2 and ZrSiO 4 was verified by good carrier mobility agreement with the universal mobility model.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2000|
|Event||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
Duration: 10 Dec 2000 → 13 Dec 2000