Molecular beam epitaxy regrowth using a thin in layer for surface passivation

C. K. Peng; S. L. Tu; S. S. Chen; Chien-Cheng Lin

doi:10.1063/1.113163

Molecular beam epitaxy regrowth using a thin in layer for surface passivation

C. K. Peng^*, S. L. Tu, S. S. Chen, Chien-Cheng Lin

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report a molecular beam epitaxy regrowth technique using a thin In layer for surface passivation. X-ray photoemission spectroscopy measurements show that an In layer as thin as a few tenths of an angstrom is adequate for the effective protection of the underlying III-V epilayers from carbon and oxygen contamination, while still providing exposure to the atmosphere. C-V depth profilings of the regrown pseudomorphic high electron mobility transistors (PHEMTs) reveal no significant residual charge carriers near the regrowth interface. The regrown PHEMTs with 1 μm gate length have a transconductance as high as 330 mS/mm and f_t over 23 GHz.

Original language	English
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113163
State	Published - 1 Dec 1995

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abstract = "We report a molecular beam epitaxy regrowth technique using a thin In layer for surface passivation. X-ray photoemission spectroscopy measurements show that an In layer as thin as a few tenths of an angstrom is adequate for the effective protection of the underlying III-V epilayers from carbon and oxygen contamination, while still providing exposure to the atmosphere. C-V depth profilings of the regrown pseudomorphic high electron mobility transistors (PHEMTs) reveal no significant residual charge carriers near the regrowth interface. The regrown PHEMTs with 1 μm gate length have a transconductance as high as 330 mS/mm and ft over 23 GHz.",

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