Molecular beam epitaxy regrowth and device performance of GaAs-based pseudomorphic high electron mobility transistors using a thin indium passivation layer

Sheu Shung Chen, Chien-Cheng Lin, Chin Kun Peng, Yi Jen Chan

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Using the technique of molecular beam epitaxy, an indium passivation layer as thin as several tens of angstroms was implemented to protect underlying III-V epilayers from carbon and oxygen contamination. After the subsequent desorption of the passivation layer, GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) were regrown. Negligible residual carriers were detected at the interface between the regrown PHEMTs and the underlying layer, resulting in a superior performance. The regrown PHEMTs with a 1×100 μm2 gate demonstrated an extrinsic transconductance gme as high as 330 mS mm-1. Microwave measurements showed that the current gain cut-off frequency ft was 26.5 GHz and the maximum oscillation frequency fmax was up to 48 GHz. A small-signal equivalent circuit model of the regrown PHEMTs was also evaluated.

Original languageEnglish
Pages (from-to)483-487
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume11
Issue number6
DOIs
StatePublished - 1 Aug 2000

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