Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

H. Luo*, N. Samarth, F. C. Zhang, A. Pareek, M. Dobrowolska, J. K. Furdyna, K. Mahalingam, N. Otsuka, Wu-Ching Chou, A. Petrou, S. B. Qadri

*Corresponding author for this work

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Abstract

We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.

Original languageEnglish
Pages (from-to)1783-1785
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number16
DOIs
StatePublished - 1 Dec 1991

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    Luo, H., Samarth, N., Zhang, F. C., Pareek, A., Dobrowolska, M., Furdyna, J. K., Mahalingam, K., Otsuka, N., Chou, W-C., Petrou, A., & Qadri, S. B. (1991). Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe. Applied Physics Letters, 58(16), 1783-1785. https://doi.org/10.1063/1.105090