Molecular beam epitaxial GaAs optical detectors on silica fibers

Wei Qi Li*, Albert Chin, Pallab Bhattacharya, S. DiVita

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

By using molecular beam epitaxy and post-growth annealing techniques, we have successfully made GaAs interdigitated photoconductive detectors on D-shaped silica fibers. The detectors exhibit low leakage current and internal photoconductive gains of up to 15 are measured. To our knowledge this is the first realization of active III-V optoelectronic devices on fibers and opens up the possibility of realizing optoelectronic integration and circuits directly on fibers.

Original languageEnglish
Pages (from-to)1768-1770
Number of pages3
JournalApplied Physics Letters
Volume52
Issue number21
DOIs
StatePublished - 1 Dec 1988

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