Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Runze Zhan, Chengyuan Dong, Bo-Ru Yang, Han-Ping Shieh

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics
Original languageEnglish
Article numberUNSP 090205
JournalJapanese Journal of Applied Physics
Volume52
Issue number9
DOIs
StatePublished - Sep 2013

Keywords

  • TFTS

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