Modified resistive switching behavior of Zr O2 memory films based on the interface layer formed by using Ti top electrode

Chih Yang Lin*, Chung Yi Wu, Chen Yu Wu, Tseung-Yuen Tseng, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

133 Scopus citations

Abstract

The influence of Ti top electrode material on the resistive switching properties of Zr O2 -based memory film using Pt as bottom electrode was investigated in the present study. When Ti is used as top electrode, the resistive switching behavior becomes dependent on bias polarity and no current compliance is needed during switching into high conducting state. This phenomenon is attributed to the fact that a series resistance between Ti and Zr O2 film, composed of a Ti Ox layer, a Zr Oy layer, and even the contact resistance, imposed a current compliance on the memory device. Besides, our experimental results imply that switching the device into high conducting state is a field driven process while switching back into low conducting state is a current driven process.

Original languageEnglish
Article number094101
JournalJournal of Applied Physics
Volume102
Issue number9
DOIs
StatePublished - 1 Dec 2007

Fingerprint Dive into the research topics of 'Modified resistive switching behavior of Zr O2 memory films based on the interface layer formed by using Ti top electrode'. Together they form a unique fingerprint.

Cite this