Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications

Ray-Hua Horng, Hsu Hung Hsueh, Sin Liang Ou, Chiao Yang Cheng, Dong Sing Wuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, GaN-based light emitting diodes (LEDs) were prepared on the cone-shaped patterned sapphire substrates (PSSs) by metal-organic chemical vapor deposition. To improve the epilayer quality and device performance of LEDs, the PSSs were further wet etched to form the modified top-tip cone shapes. With increasing the wet etching time to 3 min, the LED grown on the cone-shaped PSS has 53% and 8% enhancement in light output (@ 20 mA) as compared with that on conventional sapphire substrate (CSS) and the cone-shaped PSS without wet etching, respectively.

Original languageEnglish
Title of host publication2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
Pages73-74
Number of pages2
DOIs
StatePublished - 29 Nov 2013
Event2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 - Hsinchu, Taiwan
Duration: 6 Jul 20139 Jul 2013

Publication series

Name2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013

Conference

Conference2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013
CountryTaiwan
CityHsinchu
Period6/07/139/07/13

Keywords

  • cone shape
  • light-emitting diode
  • patterned sapphire substrate
  • wet etching

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    Horng, R-H., Hsueh, H. H., Ou, S. L., Cheng, C. Y., & Wuu, D. S. (2013). Modified cone shapes on patterned sapphire substrates for high performance InGaN LED applications. In 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013 (pp. 73-74). [6621500] (2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013). https://doi.org/10.1109/ICAIT.2013.6621500