Modification of n-Si(100) surface by scanning tunneling microscope tip-induced anodization under nitrogen atmosphere

Hiroyuki Sugimura, Noboru Kitamura, Hiroshi Masuhara*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations

Abstract

A hydrogen-terminated silicon (Si) surface was modified under nitrogen atmosphere by the use of a scanning tunneling microscope (STM). Nanoscale silicon oxide (SiOx) patterns were fabricated by STM tip-induced oxidation of Si with adsorbed water. Oxide formation was promoted in the sample bias range of +2.0 ~ + 10.0.V (tip-induced anodization) 6–28 times as efficiently as that in the bias range of –3.0 ~ 5.0 V (field-enhanced oxidation). The spatial resolution of SiOx patterns was improved by increasing the tip scan rate, and line patterns of ~20 nm in width were obtained under the optimized conditions.

Original languageEnglish
Pages (from-to)L143-L145
JournalJapanese Journal of Applied Physics
Volume33
Issue number1
DOIs
StatePublished - 1 Jan 1994

Keywords

  • Anodization
  • Nanolithography
  • Scanning tunneling microscopy
  • Silicon
  • Silicon oxide
  • Surface modification

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