A hydrogen-terminated silicon (Si) surface was modified under nitrogen atmosphere by the use of a scanning tunneling microscope (STM). Nanoscale silicon oxide (SiOx) patterns were fabricated by STM tip-induced oxidation of Si with adsorbed water. Oxide formation was promoted in the sample bias range of +2.0 ~ + 10.0.V (tip-induced anodization) 6–28 times as efficiently as that in the bias range of –3.0 ~ 5.0 V (field-enhanced oxidation). The spatial resolution of SiOx patterns was improved by increasing the tip scan rate, and line patterns of ~20 nm in width were obtained under the optimized conditions.
- Scanning tunneling microscopy
- Silicon oxide
- Surface modification