Modelling temperature effects of quarter micrometre MOSFETs in BSIM3v3 for circuit simulation

Yuhua Cheng*, Kiyotaka Imai, Min Chie Jeng, Zhihong Liu, Kai Chen, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations

Abstract

This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to 150°C. I-V, G m and G ds are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.

Original languageEnglish
Pages (from-to)1349-1354
Number of pages6
JournalSemiconductor Science and Technology
Volume12
Issue number11
DOIs
StatePublished - 1 Nov 1997

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