Modeling the Turn-Off Characteristics of the Bipolar-MOS Transistor

D. S. Kuo, J. Y. Choi, D. Gian'domenico, Chen-Ming Hu, S. P. Sapp, K. A. Sassaman, R. Bregar

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turn-off waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistaiice.

Original languageEnglish
Pages (from-to)211-214
Number of pages4
JournalIEEE Electron Device Letters
Volume6
Issue number5
DOIs
StatePublished - 1 Jan 1985

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    Kuo, D. S., Choi, J. Y., Gian'domenico, D., Hu, C-M., Sapp, S. P., Sassaman, K. A., & Bregar, R. (1985). Modeling the Turn-Off Characteristics of the Bipolar-MOS Transistor. IEEE Electron Device Letters, 6(5), 211-214. https://doi.org/10.1109/EDL.1985.26101