Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs

Chun Yu Lin*, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-controlled rectifier (SCR) has been reported with the good electrostatic discharge (ESD) robustness under the lower parasitic capacitance among ESD devices in CMOS technology. To correctly predict the performances of SCR-based ESD-protected RF circuit, it is essential for RF circuit design with accurate model of SCR device. The small-signal model of SCR in RF frequency band is proposed in this work. The measured parasitic capacitances well agree with the simulated capacitances. With the proposed small-signal model, on-chip ESD protection can be co-designed with RF circuits to eliminate the negative impacts caused by ESD protection SCR on RF performances.

Original languageEnglish
Title of host publication2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program
Pages104-107
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Kaohsiung, Taiwan
Duration: 18 Nov 201019 Nov 2010

Publication series

Name2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program

Conference

Conference2010 International Symposium on Next-Generation Electronics, ISNE 2010
CountryTaiwan
CityKaohsiung
Period18/11/1019/11/10

Keywords

  • Electrostatic discharges (ESD)
  • Low-capacitance (low-C)
  • Modeling
  • Radio-frequency (RF)
  • Silicon-controlled rectifier (SCR)

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    Lin, C. Y., & Ker, M-D. (2010). Modeling the parasitic capacitance of ESD protection SCR to Co-design matching network in RF ICs. In 2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program (pp. 104-107). [5669189] (2010 International Symposium on Next-Generation Electronics, ISNE 2010 - Conference Program). https://doi.org/10.1109/ISNE.2010.5669189