Modeling the Impurity Profile in an Ion-Implanted Layer of an IGFET for the Calculation of Threshold Voltages

Luong Mo Dang, Hiroshi Iwai

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

An extremely simple model for the impurity profile in an ion-implanted channel layer of an IGFET is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel silicon devices.

Original languageEnglish
Pages (from-to)116-117
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume28
Issue number1
DOIs
StatePublished - Jan 1981

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