Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs

Mansun Chan*, Pin Su, Hui Wan, Chung Hsun Lin, Samuel K.H. Fung, Ali M. Niknejad, Chen-Ming Hu, Ping K. Ko

*Corresponding author for this work

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described.

Original languageEnglish
Pages (from-to)969-978
Number of pages10
JournalSolid-State Electronics
Volume48
Issue number6
DOIs
StatePublished - 1 Jun 2004

Keywords

  • BSIMSOI
  • Circuit simulation
  • Device model
  • SOI
  • SOI devices
  • SPICE

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