The ac impedance of the polysilicon-silicon interface is investigated over a range of frequency and voltage. The structure used to study the impedance in an n** plus buried layer resistor with polysilicon-silicon contacts. It is found that the ac impedance of the polysilcon-silicon interface can be modeled as a frequency-independent parallel resistance and capacitance. For devices with significant interfaces, the resistance is voltage-dependent; for clean interfaces, the resistance is voltage-independent.
|Number of pages||3|
|State||Published - 1 Dec 1987|