A novel microstrip line layout is developed to direct measure the min. noise figure (NF min ) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NF min of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18μm MOSFETs without any de-embedding. Based on the accurate NF min measurement, we have developed the self-consistent DC, S-parameters and NF min model to predict device characteristics after the continuous stress with good accuracy.
|Number of pages||4|
|Journal||Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium|
|State||Published - 15 Nov 2005|
|Event||2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States|
Duration: 12 Jun 2005 → 14 Jun 2005
- RF noise