Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout

H. L. Kao*, Albert Chin, J. M. Lai, C. F. Lee, K. C. Chiang, S. P. McAlister

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

16 Scopus citations

Abstract

A novel microstrip line layout is developed to direct measure the min. noise figure (NF min ) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NF min of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18μm MOSFETs without any de-embedding. Based on the accurate NF min measurement, we have developed the self-consistent DC, S-parameters and NF min model to predict device characteristics after the continuous stress with good accuracy.

Original languageEnglish
Article numberRMO2C-5
Pages (from-to)157-160
Number of pages4
JournalDigest of papers - IEEE Radio Frequency Integrated Circuits Symposium
DOIs
StatePublished - 15 Nov 2005
Event2005 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Digest of Papers - Long Beach, CA, United States
Duration: 12 Jun 200514 Jun 2005

Keywords

  • Lifetime
  • Model
  • NF
  • RF noise
  • Stress

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