Modeling of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes are presented. The results show that the model can well describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12μm regime.
|Number of pages||4|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA|
Duration: 8 Sep 1997 → 10 Sep 1997
|Conference||Proceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97|
|City||Cambridge, MA, USA|
|Period||8/09/97 → 10/09/97|