Modeling reverse short channel and narrow width effects in small size MOSFET's for circuit simulation

Yuhua Cheng*, Toshihiro Sugii, Kai Chen, Zhihong Liu, Min Chie Jeng, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

Modeling of small size MOSFETs and experimental verification of the model using devices with varying pocket implant processes are presented. The results show that the model can well describe reverse short channel and narrow width effects and match the measured characteristics of threshold voltage and saturation current over a wide range of channel lengths and widths down to 0.12μm regime.

Original languageEnglish
Pages249-252
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97 - Cambridge, MA, USA
Duration: 8 Sep 199710 Sep 1997

Conference

ConferenceProceedings of the 1997 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD'97
CityCambridge, MA, USA
Period8/09/9710/09/97

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