Modeling off-state leakage current of DG-SOI MOSFET's for low-voltage design

Bin Yu*, Tetsu Tanaga, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

A numerical model has been developed for studying off-state leakage current in double-gate (DG) silicon-on-insulator (SOI) MOSFET devices. The model uses the concept of Center-Surface-Barrier-Difference (CSBD) to determine the effects of doping on the leakage current and examine its most dominant path. Results obtained using the proposed model show good agreement with experimental data.

Original languageEnglish
Pages15-17
Number of pages3
StatePublished - 1 Dec 1996
EventProceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA
Duration: 30 Sep 19963 Oct 1996

Conference

ConferenceProceedings of the 1996 IEEE International SOI Conference
CitySanibel Island, FL, USA
Period30/09/963/10/96

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    Yu, B., Tanaga, T., & Hu, C-M. (1996). Modeling off-state leakage current of DG-SOI MOSFET's for low-voltage design. 15-17. Paper presented at Proceedings of the 1996 IEEE International SOI Conference, Sanibel Island, FL, USA, .