A numerical model has been developed for studying off-state leakage current in double-gate (DG) silicon-on-insulator (SOI) MOSFET devices. The model uses the concept of Center-Surface-Barrier-Difference (CSBD) to determine the effects of doping on the leakage current and examine its most dominant path. Results obtained using the proposed model show good agreement with experimental data.
|Number of pages||3|
|State||Published - 1 Dec 1996|
|Event||Proceedings of the 1996 IEEE International SOI Conference - Sanibel Island, FL, USA|
Duration: 30 Sep 1996 → 3 Oct 1996
|Conference||Proceedings of the 1996 IEEE International SOI Conference|
|City||Sanibel Island, FL, USA|
|Period||30/09/96 → 3/10/96|