Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack

Chih Hong Hwang*, Yiming Li

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The work-function fluctuation (WKF) induced threshold voltage variability (σVth) in 16-nm-gate bulk FinFET devices is for the first time explored and modeled by an experimentally validated Monte Carlo simulation approach. A comprehensive analysis of variability sources of FinFETs is first conducted to show the significance of WKF in reliability of nano-device. Then, the influences of grain size of metal and aspect ratio of device geometry on σVth are drawn. The analytical expression of WKF-induced σVth can outlook the effectiveness of the fluctuation suppression approaches and benefits the design of nanoscale transistors.

Original languageEnglish
Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages74-75
Number of pages2
DOIs
StatePublished - 2010
Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
Duration: 26 Apr 201028 Apr 2010

Publication series

NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
CountryTaiwan
CityHsin Chu
Period26/04/1028/04/10

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    Hwang, C. H., & Li, Y. (2010). Modeling of work-function fluctuation for 16 nm FinFET devices with TiN/HfSiON gate stack. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 74-75). [5488942] (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488942