Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

E. Miranda*, J. Sune, T. Kawanago, K. Kakushima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (V G) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.

Original languageEnglish
Title of host publicationProceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
Pages257-260
Number of pages4
DOIs
StatePublished - 2013
Event9th Spanish Conference on Electron Devices, CDE 2013 - Valladolid, Spain
Duration: 12 Feb 201314 Feb 2013

Publication series

NameProceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

Conference

Conference9th Spanish Conference on Electron Devices, CDE 2013
CountrySpain
CityValladolid
Period12/02/1314/02/13

Keywords

  • breakdown
  • MOS
  • reliability

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