Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

E. Miranda; J. Sune; T. Kawanago; K. Kakushima; H. Iwai

doi:10.1109/CDE.2013.6481391

Modeling of the post-breakdown I_G-V_G-V_D characteristics of La₂O₃-based MOS transistors

E. Miranda^*, J. Sune, T. Kawanago, K. Kakushima, H. Iwai

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A simple analytic model for the post-breakdown conduction characteristics in W/La₂O₃/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I_G) as a function of the gate (V _G) and drain (V_D) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.

Original language	English
Title of host publication	Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
Pages	257-260
Number of pages	4
DOIs	https://doi.org/10.1109/CDE.2013.6481391
State	Published - 2013
Event	9th Spanish Conference on Electron Devices, CDE 2013 - Valladolid, Spain Duration: 12 Feb 2013 → 14 Feb 2013

Publication series

Name	Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

Conference

Conference	9th Spanish Conference on Electron Devices, CDE 2013
Country	Spain
City	Valladolid
Period	12/02/13 → 14/02/13

Keywords

breakdown
MOS
reliability

Access to Document

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Miranda, E., Sune, J., Kawanago, T., Kakushima, K., & Iwai, H. (2013). Modeling of the post-breakdown I_G-V_G-V_D characteristics of La₂O₃-based MOS transistors. In Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013 (pp. 257-260). [6481391] (Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013). https://doi.org/10.1109/CDE.2013.6481391

@inproceedings{1c1a96292c7848e6b9eff91b2203e2ed,

title = "Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors",

abstract = "A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (V G) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.",

keywords = "breakdown, MOS, reliability",

author = "E. Miranda and J. Sune and T. Kawanago and K. Kakushima and H. Iwai",

year = "2013",

doi = "10.1109/CDE.2013.6481391",

language = "English",

isbn = "9781467346689",

series = "Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013",

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note = "null ; Conference date: 12-02-2013 Through 14-02-2013",

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Miranda, E, Sune, J, Kawanago, T, Kakushima, K & Iwai, H 2013, Modeling of the post-breakdown I_G-V_G-V_D characteristics of La₂O₃-based MOS transistors. in Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013., 6481391, Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013, pp. 257-260, 9th Spanish Conference on Electron Devices, CDE 2013, Valladolid, Spain, 12/02/13. https://doi.org/10.1109/CDE.2013.6481391

Modeling of the post-breakdown I_G-V_G-V_D characteristics of La₂O₃-based MOS transistors. / Miranda, E.; Sune, J.; Kawanago, T.; Kakushima, K.; Iwai, H.

Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013. 2013. p. 257-260 6481391 (Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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