Modeling of the leakage current in ultrathin la2O3 films using a generalized power law equation

E. Miranda*, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La2O3) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultrahigh vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model with series and parallel resistances. This particular voltage dependence, in combination with the stepwise increase exhibited by the current-time (I-t) characteristic during a constant voltage stress, suggests that the leakage current through the oxide layer might be ascribed to multiple dielectric breakdown conduction.

Original languageEnglish
Title of host publicationProceedings of 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
Pages306-310
Number of pages5
DOIs
StatePublished - 2006
Event13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006 - Singapore, Singapore
Duration: 3 Jul 20067 Jul 2006

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference13th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2006
CountrySingapore
CitySingapore
Period3/07/067/07/06

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