Modeling of the hole current caused by Fowler-Nordheim tunneling through thin oxides

Gertjan Hemink*, Tetsuo Endoh, Shirota Riichiro

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

A new model for the substrate hole current that occurs during Fowler-Nordheim (FN) stress of thin oxides is proposed. The model is based on the assumption that hot hole injection occurs at the anode. The probability that a hole is emitted in the oxide and contributes to the hole current is described by an empirical relation that is a function of the effective barrier height and the average energy of the electrons arriving at the anode. To compute the average electron energy in the oxide, an energy dependent energy relaxation distance is used. The results obtained with the model are in very good agreement with the measurements for oxides within a thickness range of 5.5 to 12.5 nm.

Original languageEnglish
Pages (from-to)546-549
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume33
Issue number1
DOIs
StatePublished - 1 Jan 1994
EventProceedings of the 1993 International Conference on Solid State Devices and Materials (SSDM '93) - Chiba, Jpn
Duration: 29 Aug 19931 Sep 1993

Keywords

  • Anode hole injection
  • Fowler-Nordheim tunneling
  • Thin oxides
  • Tunnel oxides

Fingerprint Dive into the research topics of 'Modeling of the hole current caused by Fowler-Nordheim tunneling through thin oxides'. Together they form a unique fingerprint.

Cite this