Modeling of Read-Disturb-Induced SET-State Current Degradation in a Tungsten Oxide Resistive Switching Memory

Po Cheng Su, Cheng Min Jiang, Chih Wei Wang, Ta-Hui Wang*

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We characterize SET-state current degradation induced by read operations in a tungsten oxide resistive memory cell. The current degradation exhibits a two-stage evolution. In the second stage, the current decline follows inverse power-law dependence on cumulative read-disturb time. We present an analytical model to derive the inverse power law. Our model includes oxygen ion activation, mobile oxygen ion hopping, and the reduction of oxygen vacancy density by re-oxidation. Voltage and temperature effects on read-disturb-induced degradation are characterized for comparison with the model. Our results show that the power factor in the inverse power law has exponential dependence on a read voltage.

Original languageEnglish
Article number8454433
Pages (from-to)1648-1651
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number11
DOIs
StatePublished - 1 Nov 2018

Keywords

  • Resistive memory
  • analytical model
  • read-disturb

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