Modeling of pocket implanted MOSFETs for anomalous analog behavior

Kanyu Mark Cao*, Weidong Liu, Xiaodong Jin, Karthik Vasanth, Keith Green, John Krick, Tom Vrotsos, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

62 Scopus citations

Abstract

Pocket implant is widely used in deep-sub-micron CMOS technologies to combat short channel effects. It, however, brings anomalously large drain-induced threshold voltage shift and low output resistance to long channel devices. This creates a serious problem for high-performance analog circuits. In this paper, the first physical model of these effects are proposed and verified against data from a 0.18μm technology. This model is suitable for SPICE modeling.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1999
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 5 Dec 19998 Dec 1999

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