Modeling of nonlinear thermal resistance in FinFETs

Bala Krishna Kompala, Pragya Kushwaha, Harshit Agarwal, Sourabh Khandelwal, Juan Pablo Duarte, Chen-Ming Hu, Yogesh Singh Chauhan

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


In this paper, self-consistent three-dimensional (3D) device simulations for exact analysis of thermal transport in FinFETs are performed. We analyze the temperature rise in FinFET devices with the variation in the number of fins (Nfin), shape of fins and fin pitch (Fpitch). We investigate that the thermal resistance Rth has nonlinear dependency on Nfin and Fpitch. We formulate a model for thermal resistance behavior correctly with Nfin and Fpitch variation. The proposed formulation is implemented in industry standard Berkeley short-channel independent gate FET model for common multi-gate transistors (BSIM-CMG) and validated with both experimental data and TCAD simulations.

Original languageEnglish
Article number04ED11
JournalJapanese Journal of Applied Physics
Issue number4
StatePublished - 1 Apr 2016

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