Modeling of minibands for Si/Sc quantum dot superlattice solar cells

Yi Chia Tsai, Ming Yi Lee, Yiming Li*, Seiji Samukawa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The silicon (Si)/silicon carbide (SiC) quantum dot superlattice solar cells (SiC-QDSL) with aluminum oxide (A12O3-QDSL) passivation approaches a high short-circuit current (Jsc) of 4.77 mA/cm2 under AMI.5 and one sun illumination due to the quantum enhancement on effective bandgap and minimum transition energy. This value matches well with experimental measurement of 4.75 mA/cm2. To further optimize the conversion efficiency through the geometry of Al2O3-QDSL, we introduce several parameters to define a complete QDSL configuration. A high conversion efficiency of 17.4% is optimized by using the QD geometry from experiment and applying hexagonal QDSL formation with an inter-dot spacing of 0.3 nm.

Original languageEnglish
Title of host publicationMaterials for Energy, Efficiency and Sustainability - TechConnect Briefs 2017
EditorsBart Romanowicz, Fiona Case, Matthew Laudon, Fiona Case
PublisherTechConnect
Pages41-44
Number of pages4
ISBN (Electronic)9780997511796
StatePublished - 1 Jan 2017
Event11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
Duration: 14 May 201717 May 2017

Publication series

NameAdvanced Materials - TechConnect Briefs 2017
Volume2

Conference

Conference11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period14/05/1717/05/17

Keywords

  • Conversion efficiency
  • Geometry parameters
  • Si/SiC quantum dot
  • Solar cell

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