Modeling of microwave active devices using the FDTD analysis based on the voltage-source approach

Chien-Nan Kuo*, Ruey Beei Wu, Bijan Houshmand, Tatsuo Itoh

*Corresponding author for this work

Research output: Contribution to journalArticle

52 Scopus citations

Abstract

This letter describes a voltage-source-based formulation of the extended finite-difference time-domain algorithm for the purpose of modeling microwave devices. The device-wave interaction is fully characterized by replacing the lumped devices with equivalent voltage sources in the device region, which in turn generate electromagnetic fields according to Faraday's law. This formulation is applied to the analysis of a typical microwave amplifier, which includes a three-terminal active MESFET device. Simulation results are in good agreement with measured data.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume6
Issue number5
DOIs
StatePublished - 1 May 1996

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