We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and back-gate charges as well as the respective mobilities for the development of analytical expression. The model is implemented in Verilog-A and validated with experimentally calibrated TCAD simulations. The model predicts the high-frequency behavior with good accuracy while capturing the back-bias dependence.
- Compact model
- fully depleted silicon on insulator (FDSOI)
- high frequency
- induced gate noise
- power spectral density (PSD)
- ultrathin body silicon on insulator
- ultrathin body with thin box (UTBB)