Modeling of GaN based resonant-cavity light-emitting diode

Z. Simon Li, Z. Q. Li*, Ray-Hua Horng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We extended the theory by Henry [1] to accurately treat the coupling of spontaneous emission noise with microcavity modes. The Green's function method is employed to solve the inhomogeneous wave equation including a Langevin force fω which accounts for spontaneous emission by carriers at angular frequency ω. The optical wave equation is coupled with the self-consistent calculations of the material spontaneous emission rate of quantum well/dot using envelope wavefunction method. Finally the carrier transport equations are solved within the framework of 2D/3D drift-diffusion model implemented in the Crosslight Software package APSYS [2]. The simulation results of a GaN based resonant-cavity light-emitting diode (RC-LED) showed that our models can be used to predict the characteristics of RC-LED.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationResearch, Manufacturing, and Applications XI
DOIs
StatePublished - 24 May 2007
EventLight-Emitting Diodes: Research, Manufacturing, and Applications XI - San Jose, CA, United States
Duration: 24 Jan 200725 Jan 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6486
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Research, Manufacturing, and Applications XI
CountryUnited States
CitySan Jose, CA
Period24/01/0725/01/07

Keywords

  • Device simulation
  • GaN
  • Resonant cavity light-emitting diodes (RC-LED)

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