Modeling of advanced RF bulk FinFETs

P. Kushwaha*, H. Agarwal, Y. K. Lin, M. Y. Kao, J. P. Duarte, H. L. Chang, W. Wong, J. Fan, Xiayu, Y. S. Chauhan, S. Salahuddin, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.

Original languageEnglish
Pages (from-to)791-794
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number6
DOIs
StatePublished - 1 Jun 2018

Keywords

  • Berkeley short-channel IGFET model-common multi gate (BSIM-CMG)
  • compact model
  • cut-off frequency
  • RF FinFET

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