Modeling of advanced RF bulk FinFETs

P. Kushwaha; H. Agarwal; Y. K. Lin; M. Y. Kao; J. P. Duarte; H. L. Chang; W. Wong; J. Fan; Xiayu; Y. S. Chauhan; S. Salahuddin; Chen-Ming Hu

doi:10.1109/LED.2018.2825422

Modeling of advanced RF bulk FinFETs

P. Kushwaha^*, H. Agarwal, Y. K. Lin, M. Y. Kao, J. P. Duarte, H. L. Chang, W. Wong, J. Fan, Xiayu, Y. S. Chauhan, S. Salahuddin, Chen-Ming Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.

Original language	English
Pages (from-to)	791-794
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1109/LED.2018.2825422
State	Published - 1 Jun 2018

Keywords

Berkeley short-channel IGFET model-common multi gate (BSIM-CMG)
compact model
cut-off frequency
RF FinFET

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title = "Modeling of advanced RF bulk FinFETs",

abstract = "The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.",

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author = "P. Kushwaha and H. Agarwal and Lin, {Y. K.} and Kao, {M. Y.} and Duarte, {J. P.} and Chang, {H. L.} and W. Wong and J. Fan and Xiayu and Chauhan, {Y. S.} and S. Salahuddin and Chen-Ming Hu",

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doi = "10.1109/LED.2018.2825422",

language = "English",

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AU - Kushwaha, P.

AU - Agarwal, H.

AU - Lin, Y. K.

AU - Kao, M. Y.

AU - Duarte, J. P.

AU - Chang, H. L.

AU - Wong, W.

AU - Fan, J.

AU - Xiayu,

AU - Chauhan, Y. S.

AU - Salahuddin, S.

AU - Hu, Chen-Ming

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.

AB - The modeling of the advanced RF bulk FinFETs is presented in this letter. Extensive S-parameter measurements, performed on the advanced RF bulk FinFETs, show 31% improvement in cutoff frequency over recent work [1]. The transistor's characteristics are dominated by substrate parasitics at intermediate frequencies (0.1-10 GHz) and gate parasitics at high frequencies (above 10 GHz). The Berkeley short-channel IGFET model-common multi gate model is improved to account for the impact of substrate coupling on the RF parameters. The model demonstrates excellent agreement with the measured data over a broad range of frequencies. The model passes AC, DC and RF symmetry tests, demonstrating its readiness for (RF) circuit design using FinFETs.

KW - Berkeley short-channel IGFET model-common multi gate (BSIM-CMG)

KW - compact model

KW - cut-off frequency

KW - RF FinFET

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DO - 10.1109/LED.2018.2825422

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EP - 794

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 6

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Modeling of advanced RF bulk FinFETs

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Keywords

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