Modeling independent multi-gate MOSFETs

Juan Pablo Duarte, Sourabh Khandelwal, Huan Lin Chang, Yen Kai Lin, Pragya Kushwaha, Yogesh S. Chauhan, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This work presents the industry standard compact BSIM-IMG, a fully-featured turn-key compact model for independent multi-gate MOSFETs. The two independent (front- and back-gate) control of the channel charge in these devices enables novel applications wherein back-gate can be in depletion or inversion, and BSIM-IMG accurately models these scenarios. Modeling of the channel-charge in this device requires a consistent solution of coupled Poisson's equations at the front and the back-gate. This papers presents an analytical solution which is numerically robust and passes important quality tests for an industry grade compact model. To represent real device effects, several extra models are incorporated such as drain-induced barrier lowering, velocity saturation, short-channel effects, self-heating effect, mobility-field dependence, substrate-depletion effect, etc.

Original languageEnglish
Title of host publicationAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
EditorsBart Romanowicz, Matthew Laudon, Fiona Case, Fiona Case, Bart Romanowicz
PublisherTechConnect
Pages281-286
Number of pages6
ISBN (Electronic)9780997511734
StatePublished - 1 Jan 2016
Event10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
Duration: 22 May 201625 May 2016

Publication series

NameAdvanced Materials - TechConnect Briefs 2016
Volume4

Conference

Conference10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period22/05/1625/05/16

Keywords

  • BSIM
  • Compact model
  • Multi-gate MOSFETs

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