A model is proposed to quantify the tunneling currents through ultra-thin gate oxides. With a proper set of effective mass and barrier height, this new model can accurately predict the gate and substrate currents and all the sub-components in dual-gate CMOS devices. This model can also be employed to extract oxide thickness (Tox) for thin oxide from Ig-Vg data with 0.1 angstroms sensitivity, where CV extraction can be difficult or impossible.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 2000|
|Event||2000 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 13 Jun 2000 → 15 Jun 2000