Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length

M. C. King*, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Yun Chang, Albert Chin

*Corresponding author for this work

Research output: Contribution to conferencePaper

26 Scopus citations

Abstract

We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.

Original languageEnglish
Pages171-174
Number of pages4
StatePublished - 20 Sep 2004
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 6 Jun 20048 Jun 2004

Conference

ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityFort Worth, TX
Period6/06/048/06/04

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    King, M. C., Lai, Z. M., Huang, C. H., Lee, C. F., Ma, M. W., Huang, C. M., Chang, Y., & Chin, A. (2004). Modeling finger number dependence on RF noise to 10 GHz in 0.13μm node MOSFETs with 80nm gate length. 171-174. Paper presented at Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Fort Worth, TX, United States.