We have modeled the as-measured and deembedded NFmin on malti-fingers 0.13 μm node MOSFETs. In contrast to the as-measured large NF.min value and strong dependence on parallel gate fingers, the de-embedded NFmin has much smaller noise of only 1.1-1.2 dB for 6, 18 and 36 fingers and weak dependence. From the well calibrated equivalent circuit model with as-measured NFmin, the dominant noise source is from the probing pad generated thermal noise. From our derived equation with excellent agreement with de-embedded NFmin to 10 GHz, the weak dependence of intrinsic NFmin on gate finger is due to the combined effect of Rggm and drain hot carrier noise but both have weak dependence on finger numbers.
|Number of pages||4|
|State||Published - 20 Sep 2004|
|Event||Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States|
Duration: 6 Jun 2004 → 8 Jun 2004
|Conference||Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium|
|City||Fort Worth, TX|
|Period||6/06/04 → 8/06/04|