Electromigration lifetime under DC current stress is now routinely measured to support new metalization process development as well as to monitor the control of an existing process. The measured DC lifetime value, or design rule, is the only link between process technology and circuit design for metal reliability. This paper reviews a defect relaxation model for pulsed DC(non-alternating) current stress lifetime and a damage-healing model for AC (bidirectional) current stress lifetime. The purpose is to model the metal reliability of IC's. Both models significantly raise the predicted lifetime beyond the predictions of some previous models.
|Number of pages||7|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 21 May 1993|
|Event||Submicrometer Metallization: Challenges, Opportunities, and Limitations 1992 - San Jose, United States|
Duration: 20 Sep 1992 → 25 Sep 1992