Modeling electromigration lifetime under pulsed and AC current stress

Chenming Hu, Nathan W. Cheung, Jiang Tao, B. K. Liew

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Electromigration lifetime under DC current stress is now routinely measured to support new metalization process development as well as to monitor the control of an existing process. The measured DC lifetime value, or design rule, is the only link between process technology and circuit design for metal reliability. This paper reviews a defect relaxation model for pulsed DC(non-alternating) current stress lifetime and a damage-healing model for AC (bidirectional) current stress lifetime. The purpose is to model the metal reliability of IC's. Both models significantly raise the predicted lifetime beyond the predictions of some previous models.

Original languageEnglish
Pages (from-to)244-250
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1805
DOIs
StatePublished - 21 May 1993
EventSubmicrometer Metallization: Challenges, Opportunities, and Limitations 1992 - San Jose, United States
Duration: 20 Sep 199225 Sep 1992

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