Electromigration characteristics, especially resistance oscillations, of TiN/Al-alloy/TiN multilayered interconnect and failure mechanism of TiN barrier layer have been studied. A model has been developed for the line-width dependence of the multilayered structure. The experimental results show that the failure observed in TiN was not caused by electromigration, instead it was due to thermomigration caused by temperature gradient. The activation energy of this process was found to be 1.5 eV. In order to obtain 10-year lifetime, the hottest spot in TiN film must be kept below 408 °C. This suggests that TiN may safely conduct 2.4×10 7 A/cm 2 for typical thermal impedance of a hot spot.
|Number of pages||7|
|Journal||Annual Proceedings - Reliability Physics (Symposium)|
|State||Published - 1 Jan 1995|
|Event||Proceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA|
Duration: 4 Apr 1995 → 6 Apr 1995