Modeling electromigration failures in TiN/Al-alloy/TiN interconnects and TiN thin films

Jiang Tao*, N. W. Cheung, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

Electromigration characteristics, especially resistance oscillations, of TiN/Al-alloy/TiN multilayered interconnect and failure mechanism of TiN barrier layer have been studied. A model has been developed for the line-width dependence of the multilayered structure. The experimental results show that the failure observed in TiN was not caused by electromigration, instead it was due to thermomigration caused by temperature gradient. The activation energy of this process was found to be 1.5 eV. In order to obtain 10-year lifetime, the hottest spot in TiN film must be kept below 408 °C. This suggests that TiN may safely conduct 2.4×10 7 A/cm 2 for typical thermal impedance of a hot spot.

Original languageEnglish
Pages (from-to)371-377
Number of pages7
JournalAnnual Proceedings - Reliability Physics (Symposium)
DOIs
StatePublished - 1 Jan 1995
EventProceedings of the 33rd Annual 1995 IEEE International Reliability Physics Proceedings - Las Vegas, NV, USA
Duration: 4 Apr 19956 Apr 1995

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