Modeling bias stress effect on threshold voltage for amorphous silicon thin-film transistors and circuits

Cheng Han Shen, I. Hsiu Lo, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we study amorphous silicon thin-film-transistor (TFT) degradation under bias stress effect. To model threshold voltage shift with bias stress effect, fabricated samples are measured for I-V data with bias stress in variations of temperature. Rensselaer Polytechnic Institute (RPI) model is thus adopted to extract model parameters, such as the flat band voltage (V FB), the characteristic voltage for deep states (VO), the conduction band mobility (MUBAND), the channel length modulation parameter (LAMBDA), the power law mobility parameter (GAMMA) and the saturation modulation parameter (ALPHASAT) from the measurement. The model card with those extracted parameters is validated via a TFT circuit simulation. The results of the circuit simulation indicate the relationship of effects depending on the stress and operational temperature.

Original languageEnglish
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages788-791
Number of pages4
StatePublished - 2011
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: 13 Jun 201116 Jun 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Conference

ConferenceNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period13/06/1116/06/11

Keywords

  • Amorphous silicon TFT
  • Bias stress effect
  • Circuit simulation
  • Rensselaer Polytechnic Institute (RPI) model
  • Temperature effect
  • Threshold voltage

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