Modeling and characterization of TSV capacitor and stable low-capacitance implementation for wide-I/O application

Yao Yen Chang, Cheng Ta Ko, Tsung Han Yu, Yu Sheng Hsieh, Kuan-Neng Chen

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Equations of the electric field, surface charge, and silicon capacitance with respect to the surface potential of single through-silicon via (TSV) are derived by Poisson's equation. Four kinds of charges such as the electrons, holes, and ionized donor/acceptor charges in the p-type silicon substrate are brought into the equations. The numerical results of the surface charge show identical plots to planar MOS capacitor when the TSV radius is larger than 1 μm. After presenting the fundamental C-V characteristics of one TSV capacitor, a simple design for gaining a stable low TSV capacitance value within a wide operating window (|Vow| = 20 V) is proposed. Cu TSVs in this design are then demonstrated in the scheme of the wafer-level Cu/Sn to BCB hybrid bonding. The design gives the rational power consumption and delay, and the guideline for physical IC design is described in this paper. Without the oxide-trapped charge Qot engineering in TSV oxide liner, neither considerations of the VFB shifts nor the doping-type selection in silicon substrate, the design facilitates IC engineers to plan the high-speed TSVs at a specific location and to save the cost from TSV engineering simultaneously.

Original languageEnglish
Article number7024929
Pages (from-to)129-135
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Issue number2
StatePublished - 1 Jan 2015


  • C-V characteristics
  • Modeling
  • Threedimensional integrated circuit (3DIC)
  • Through-silicon via (TSV)

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