Modeling and characterization of radio-frequency characteristics of multi-finger nanometer MOS transistors

H. Wong*, S. L. Siu, K. Kakusima, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

This work reports a new model parameter extraction scheme for multi-finger MOS transistors operated in the radio-frequency (RF) range. The drain parasitic inductance, intrinsic capacitance, channel resistance, gate resistance, drain resistance, and source resistance are determined from the scattering parameters measured on RFMOS transistors with channel length of 90nm, 100nm and 110nm with different numbers of gate-fingers. Most of the values and dependencies of the extracted parameters agree with the theoretical models. However, for transistor with gate length of 90 nm and 48 gate fingers, the experimental result suggests the substrate capacitance and substrate resistance should be considered in the small signal equivalent circuit.

Original languageEnglish
Title of host publication2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages3-7
Number of pages5
DOIs
StatePublished - 2009
Event2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China
Duration: 25 Dec 200927 Dec 2009

Publication series

Name2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Conference

Conference2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
CountryChina
CityXi'an
Period25/12/0927/12/09

Keywords

  • CMOS
  • Parameter extraction
  • Radio frequency model

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    Wong, H., Siu, S. L., Kakusima, K., & Iwai, H. (2009). Modeling and characterization of radio-frequency characteristics of multi-finger nanometer MOS transistors. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 (pp. 3-7). [5394277] (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). https://doi.org/10.1109/EDSSC.2009.5394277