Modeling and Characterization of Gate Oxide Reliability

Jack C. Lee*, Ih Chin Chen, Chen-Ming Hu, Ih Chin Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

280 Scopus citations

Abstract

In this paper, we present a technique of predicting the lifetime of an oxide for different voltages, different oxide areas, and different temperatures. Using the defect model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. This modeling procedure is applicable to both wafer-level and long-term reliability tests. Process improvements including defect gettering and alternative dielectrics such as chemical-vapor deposited oxides are evaluated in the format of defect density as a function of effective oxide thinning.

Original languageEnglish
Pages (from-to)2268-2278
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume35
Issue number12
DOIs
StatePublished - 1 Jan 1988

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