Modeling and characterization of electromigration failures under bidirectional current stress

Jiang Tao*, Jone F. Chen, Nathan W. Cheung, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

31 Scopus citations

Abstract

Electromigration reliability of different metallization systems (Al-2%Si, Al-Cu/TiW, Cu, and TiN/Al-2%Si/TiN) and structures (Al-via and W-plug) under bidirectional current stress has been studied in a wide frequency range (from mHz to 200 MHz). The experimental results show that at low frequency, the damage healing factor and lifetime under ac stress increases with frequency. At very high-frequency regions, the pure ac lifetime was found to be determined by the thermal process (caused by asymmetrical geometry, etc.) instead of electromigration. All the observations are in agreement with an average current model.

Original languageEnglish
Pages (from-to)800-808
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume43
Issue number5
DOIs
StatePublished - 1 Dec 1996

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