Modeling and characterization of direct-tunneling current in dual-layer ultrathin-gate dielectric films

Hei Wong*, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

This work presents a comprehensive investigation on the modeling and characterization of the direct-tunneling (DT) current in ultrathin-gate dielectric film based on the classical model equation. Merit of replacement, which takes both the capacitance gain and the DT current suppression into consideration, was introduced to have a better comparison of different gate dielectric materials. A simple approach for modeling the dual-layer dielectric film is also developed. The tunneling characteristics of a dual-layer stack are modeled with an effective barrier and an effective thickness. The simple approach is particularly useful for device designs and process evaluation.

Original languageEnglish
Pages (from-to)1785-1793
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume24
Issue number4
DOIs
StatePublished - Jul 2006

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