Abstract
This paper discusses the challenges in the modeling, analysis, and TCAD of nanoscale devices and circuits. Compact modeling of gate-oxide related long term degradations, and quantum mechanical and nanoscale effects are addressed. Atomistic simulations and mixed-mode simulations based on fundamental physics for evaluation and exploration of emerging devices and circuits are illustrated. Automated migration to non-planar FinFET device structure is discussed. Fast Monte Carlo algorithm to enable statistical analysis of large scale circuits and memories, and to speed up TCAD computational efficiency is elaborated. The needs for phonon Boltzmann Transport based, coupled self-consistent electro-thermal solver/analysis, and full-band Monte Carlo electron-phonon interaction analysis for accurate prediction of self-heating in devices with ultra-thin silicon film are discussed.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Symposium on Circuits and Systems (ISCAS 2009) |
| Publisher | IEEE |
| Pages | 2305-2308 |
| Number of pages | 4 |
| State | Published - 2009 |
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Cite this
Chuang, C-T. (2009). Modeling, Analysis, and TCAD of Nanoscale Devices and Circuits. In IEEE International Symposium on Circuits and Systems (ISCAS 2009) (pp. 2305-2308). IEEE.