Modeling 20-nm Germanium FinFET with the industry standard FinFET model

Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chen-Ming Hu

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

In this letter, we present modeling results for germanium p-type FinFETs using the industry standard Berkeley Spice Common Multi-gate Field Effect Transistor (BSIM-CMG) model. The effect of perpendicular electrical field on hole mobility in germanium FinFETs is found to be different from silicon FinFETs. We present an updated Ge mobility equation to account for this difference. With this single update, BSIM-CMG agrees very well with the measured I-V data of Ge FinFETs with a gate-length from 130 to 20 nm. We conclude that a production quality standard model is available for simulation of circuits employing p-type Ge FinFET.

Original languageEnglish
Article number6823649
Pages (from-to)711-713
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number7
DOIs
StatePublished - 1 Jan 2014

Keywords

  • BSIM-CMG
  • FinFETs
  • Germanium
  • compact models

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