Model for photoresist-induced charging damage in ultra-thin gate oxides

Horng-Chih Lin*, Chao-Hsin Chien, Meng Feng Wang, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to conferencePaper

3 Scopus citations

Abstract

The role of photoresist (PR) in affecting the gate oxide damage during plasma processing was reexamined in this work. It was observed that, during the O2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We found that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.

Original languageEnglish
Pages247-250
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage - Monterey, CA, USA
Duration: 13 May 199714 May 1997

Conference

ConferenceProceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage
CityMonterey, CA, USA
Period13/05/9714/05/97

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    Lin, H-C., Chien, C-H., Wang, M. F., Huang, T. Y., & Chang, C. Y. (1997). Model for photoresist-induced charging damage in ultra-thin gate oxides. 247-250. Paper presented at Proceedings of the 1997 2nd International Symposium on Plasma Process-Induced Damage, Monterey, CA, USA, . https://doi.org/10.1109/PPID.1997.596761