Model for photo-induced long-term drain current transients in GaAs MESFETs

Peter George, Ping K. Ko, Chen-Ming Hu

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

A simple model is presented for the negative drain current transients observed in GaAs MESFETs when subjected to ionizing radiation. The two dominant mechanisms are proposed to be electron trapping under the Schottky gate and in the neutral semi-insulating substrate. The model is suitable for the design and evaluation of radiation-resistant GaAs MESFET integrated circuits using common electrical simulators such as SPICE3.

Original languageEnglish
Pages (from-to)721-728
Number of pages8
JournalInternational Journal of Electronics
Volume68
Issue number5
DOIs
StatePublished - 1 Jan 1990

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