Abstract
In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.
Original language | English |
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Pages | 237-240 |
Number of pages | 4 |
DOIs | |
State | Published - 1 Jan 1997 |
Event | Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997 |
Conference
Conference | Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications |
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City | Taipei, China |
Period | 3/06/97 → 5/06/97 |