Model and solution of reverse short channel effect

Bing-Yue Tsui*, Chih Chiang Wang, Tzung Zu Yang, Shyang Hwang-Leu, Geeng Lih Lin, Shyh Chyi Wong

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.

Original languageEnglish
Pages237-240
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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