Model and solution of reverse short channel effect

Bing-Yue Tsui; Chih Chiang Wang; Tzung Zu Yang; Shyang Hwang-Leu; Geeng Lih Lin; Shyh Chyi Wong

doi:10.1109/VTSA.1997.614766

Model and solution of reverse short channel effect

Bing-Yue Tsui^*, Chih Chiang Wang, Tzung Zu Yang, Shyang Hwang-Leu, Geeng Lih Lin, Shyh Chyi Wong

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.

Original language	English
Pages	237-240
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.1997.614766
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, China
Period	3/06/97 → 5/06/97

Access to Document

10.1109/VTSA.1997.614766

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title = "Model and solution of reverse short channel effect",

abstract = "In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.",

author = "Bing-Yue Tsui and Wang, {Chih Chiang} and Yang, {Tzung Zu} and Shyang Hwang-Leu and Lin, {Geeng Lih} and Wong, {Shyh Chyi}",

year = "1997",

month = jan,

day = "1",

doi = "10.1109/VTSA.1997.614766",

language = "English",

pages = "237--240",

note = "null ; Conference date: 03-06-1997 Through 05-06-1997",

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Model and solution of reverse short channel effect. / Tsui, Bing-Yue; Wang, Chih Chiang; Yang, Tzung Zu; Hwang-Leu, Shyang; Lin, Geeng Lih; Wong, Shyh Chyi.

1997. 237-240 Paper presented at Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications, Taipei, China, .

Research output: Contribution to conference › Paper › peer-review

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T1 - Model and solution of reverse short channel effect

AU - Tsui, Bing-Yue

AU - Wang, Chih Chiang

AU - Yang, Tzung Zu

AU - Hwang-Leu, Shyang

AU - Lin, Geeng Lih

AU - Wong, Shyh Chyi

PY - 1997/1/1

Y1 - 1997/1/1

N2 - In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.

AB - In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.

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DO - 10.1109/VTSA.1997.614766

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Y2 - 3 June 1997 through 5 June 1997

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