In this work, reverse-short-channel-effect (RSCE) models were re-examined by both simulation and experiments. Based on the better understand of mechanism, a channel implantation through gate (CITG) process was demonstrated to totally suppress the RSCE. Device characteristics and oxide reliability are not degraded by the CITG process.
|Number of pages||4|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
Duration: 3 Jun 1997 → 5 Jun 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|Period||3/06/97 → 5/06/97|