Abstract
This paper investigates the phenomenon of mode switching for GaAs-based high index contrast photonic crystal surface emitting lasers (PCSELs) with deeply etched air holes. The room-temperature lasing characteristics and angular resolved photoluminescence spectra of PCSELs show that the lasing mode would change from the fundamental guided mode to a high-order guided mode as the filling factor (FF) increased, resulting from the diffraction of deeply etched semiconductor/air arrays with high index contrast. Higher order guided modes could coherently couple out of photonic crystal and would significantly influence the laser output of PCSELs with a larger air FF, leading to rich far-field characteristics.
Original language | English |
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Article number | 6400205 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 52 |
Issue number | 5 |
DOIs | |
State | Published - 1 May 2016 |
Keywords
- GaAs
- guided waves
- photonic crystals