MOCVD growth of vertically aligned InGaN nanowires

Hao-Chung Kuo, Tae Su Oh, P. C. Ku*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm -2, with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons. Crown

Original languageEnglish
Pages (from-to)311-313
Number of pages3
JournalJournal of Crystal Growth
Volume370
DOIs
StatePublished - 1 May 2013

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting III-V materials

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